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Semiconductor Resonant Tunneling Device Physics and Applications

Published online by Cambridge University Press:  28 February 2011

Mark A. Reed ,
Alan C. Seabaugh ,
Yung-Chung Kao ,
John N. Randall ,
William R. Frensley  and
James H. Luscombe
Mark A. Reed
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
Alan C. Seabaugh
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
Yung-Chung Kao
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
John N. Randall
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
William R. Frensley
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
James H. Luscombe
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
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Abstract

A discussion of resonant tunneling physics in both diode and transistor heterojunction structures is presented. It is evident the In(GaAI)As/InP system is significantly superior for this application. We also present results on resonant tunneling in lower dimensional systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 309
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Chang, L. L., Esaki, L., and Tsu, R., Appl. Phys. Lett. 24, 593 (1974).Google Scholar
[2] Sollner, T. G. L. C., Goodhue, W. D., Tannenwald, P. E., Parker, C. D., and Peck, D. D., Appl. Phys. Lett. 43, 588 (1983).Google Scholar
[3] Huang, C. I., Paulus, M. J., Bozada, C. A., Dudley, S. C., Evans, K. R., Stutz, C. E., Jones, R. L., and Cheney, M. E., Appl. Phys. Lett. 51, 121 (1987).Google Scholar
[4] Potter, R. C. and Lakhani, A. A., Appl. Phys. Lett. 52, 1349 (1988).Google Scholar
[5] Reed, M. A., Heinrich, H., Bauer, G., and Kuchar, F., Physics and Technology of ubicron Structures (Springer-Verlag, New York, 1988); pg. 64.Google Scholar
[6] Broekaert, T. P. E. and Fonstad, C. G., IEDM Technical Digest 1989, pg. 559.Google Scholar
[7] Broekaert, T. P. E., Lee, W., and Fonstad, C. G., Appl. Phys. Lett., 53, 1545 (1988).Google Scholar
[8] Inata, T., Muto, S., Nakata, Y., Sasa, S., Fujii, T., and Hiyamizu, S., Jpn. J. Appl. Phys. 26, LI332 (1987).Google Scholar
[9] Reed, M. A. and Lee, J. W., Appl. Phys. Lett. 50, 845 (1987).Google Scholar
[10] The original suggestion appears to be Mead, C. A., Proc. IRE 48, 359 (1960).Google Scholar
[11] The series combination approach is typified by Bonnefoi, A. R., McGill, T.C., and Burnham, R.D., EDL-6, 636 (1985); and T. K. Woodward, T.C. McGill and R.D. Burnham, Appl. Phys. Lett. 50, 451 (1987).Google Scholar
[12] The unipolar approach utilizing a RTD in the emitter is reported by Yokoyama, N., Imamura, K., Muto, S., Hiyamizu, S., and Nishi, H., Jap. Jour. Appl. Phys. 24, L853 (1985).Google Scholar
[13] Bipolar approaches can be found in Capasso, F. and Kiehl, R. A., Jour. Appl. Phys. 58, 1366 (1985); F. Capasso, S. Sen, A. C. Gossard, A. L. Hutchinson, and J. H. English, EDL-7, 573 (1986); and T. Futatsugi, Y. Yamaguchi, K. Imamura, S. Muto, N. Yokoyama, and A. Shibatomi, Jap. Jour. Appl. Phys. 26, L131 (1987).Google Scholar
[14] Variants on a series combination, like Capasso, F., Sen, S., Cho, A. Y., and Sivco, D. L., Appl. Phys. Lett. 53, 1056 (1988), have been reported.Google Scholar
[15] Schulman, J. N. and Waldner, M., J. Appl. Phys. 63, 2859 (1988).Google Scholar
[16] Reed, M. A., Frensley, W. R., Matyi, R. J., Randall, J. N., and Seabaugh, A. C., Appl. Phys. Lett. 54, 1034 (1989); and A. C. Seabaugh, W. R. Frensley, J. N. Randall, M. A. Reed, D. L. Farrington, and R. J. Matyi, IEEE Trans. Electron Dev. 36, 2329 (1989).Google Scholar
[17] Sunderland, D. A. and Dapkus, D., IEEE Trans. Electron Dev. ED-34, 367 (1987).Google Scholar
[18] Wolak, E. L., Lear, K. L., Pitner, P. M., Hellman, E. S. Park, B G, Weil, T., Harris, J. S. Jr., and Thomas, D., Appl. Phys. Lett. 53, 201 (1988); and E. L. Wolak, Ph. D. Thesis, Stanford University, 1989.Google Scholar
[19] Entry to the literature can be found in; Heinrich, H., Bauer, G., and Kuchar, F., Physics and Technology of Submicron Structures (Springer-Verlag, New York, 1988); and M. A. Reed and W. P. Kirk, eds., Nanostructure Physics and Fabrication (Academic Press, San Diego, 1989).Google Scholar
[20] Hansen, W., Smith, T. P. III , Lee, K. Y., Hong, J. M., and Knoedler, C. M., Appl. Phys. Lett. 56, 168 (1990); and T. P. Smith III, K. Y. Lee, C. M. Knoedler, J. M. Hong, and D. P. Kern, Phys. Rev. B38, 2172 (1988)Google Scholar
[21] Wees, B. J. Van, Kouwenhoven, L. P., Harmans, C. J. P. M., Williamson, J. G., Timmering, C. E. Broekaart, M. E. I., Foxon, C. T., and Harris, J. J., Phys. Rev. Lett. 62, 2523 (1989).Google Scholar
[22] Reed, M. A., Randall, J. N., Aggarwal, R. J., Matyi, R. J., Moore, T. M., and Wetsel, A. E., Phys. Rev. Lett. 60, 535 (1988).Google Scholar
[23] Reed, M. A., Randall, J. N., Luscombe, J. H., Frensley, W. R., Aggarwal, R. J., Matyi, R. J., Moore, T. M., and Wetsel, A. E., Festkérperprobleme: Advances in Solid State Physics Vol. 29, ed. Röβler, U. (Vieweg, Braunschweig/Wiesbaden 1989), pg. 267.Google Scholar
[24] Nakagawa, T., Fujita, T., Matsumoto, Y., Kojima, T., and Ohta, K., Appl. Phys. Lett. 51, 445 (1987).Google Scholar