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Sem Observation of Growth and Defect Formation of Heteroepitaxially grown sic on (100) Silicon

Published online by Cambridge University Press:  26 February 2011

B. Molnar  and
L. M. Shirey
B. Molnar
Affiliation:
Naval Research Laboratory, Washington, DC. 20375
L. M. Shirey
Affiliation:
Naval Research Laboratory, Washington, DC. 20375
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Abstract

Single crystal, cubic SiC films used in this study were grown by a two step CVD process on (100) oriented silicon substrates. The two surfaces of such grown SiC films are different. The SiC surface at the Si/SiC interface is more conductive than the SiC/air surface. This Si/SiC surface appears smooth under optical microscopy, but Scanning Electron Microscopy (SEM) reveals characteristic “growth features” on it. Each growth feature protrudes from the smooth SiC surface, and most often it either fills or borders the rectangular shallow pyramids present on the (100) Si surfaces. Plasma etching of the SiC at the Si/SiC interface creates cavities with vertical boundaries. Some of the cavities have been traced to the original location of some growth features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 457
Copyright
Copyright © Materials Research Society 1990

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References

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