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Selective Etching and Photo—Bleaching in Thin Amorphous Ge—Sb—S Films

Published online by Cambridge University Press:  21 February 2011

Evdokia B. Savova  and
B.I. Pashmakoff
Evdokia B. Savova
Affiliation:
Institute of solid state physics, 1784 Sofia, 72 Lenin blvd., Bulgaria
B.I. Pashmakoff
Affiliation:
Institute of solid state physics, 1784 Sofia, 72 Lenin blvd., Bulgaria
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Abstract

A mechanism is proposed for the selective etching effects in thin amorphous Ge—Sb—S films based on the combined action of photostructural changes and alkaline solvent with a surface active substance. Evidence is given in support of the assertion thatthe same photostructural changes (namely, the breaking of Ge—Sb bonds under the action of UV light) are responsible for the irreversible photo—bleaching of these layers. Four different compositions in the system Ge—Sb—S have been studied under different preparation conditions (thermal evaporation and laser—beam sputtering).Photostructural changes were induced by UV light irradiation. Infrared spectra of the layers are presented in support of the proposed model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 313
Copyright
Copyright © Materials Research Society 1990

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References

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