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Selective Area Growth of GaAs on Si by Electron-Cyclotron-Resonance Plasma-Excited Molecular-Beam-Epitaxy (ECR-MBE)

Published online by Cambridge University Press:  28 February 2011

Tomohiro Shibata ,
Naoto Kondo ,
Yasushi Nanishi  and
Masatomo Fujimoto
Tomohiro Shibata
Affiliation:
NTT Opto-electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, JAPAN
Naoto Kondo
Affiliation:
NTT Opto-electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, JAPAN
Yasushi Nanishi
Affiliation:
NTT Opto-electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, JAPAN
Masatomo Fujimoto
Affiliation:
NTT Opto-electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, JAPAN
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Abstract

Successful selective area growth of GaAs on Si following low-temperature plasma cleaning of the Si surface is carried out by ECR plasma-excited MBE. Both cleaning and selective area growth are carried out at 630° C. GaAs selectively grows only in Si windows patterned in the SiN mask. Neither deposition on the SiN mask nor anomalous growth at the mask edge is observed. GaAs thickness is independent of the SiN mask width, which implies that the plasma-enhanced desorption of migrating atoms from the SiN mask is essential in this selective area growth. Furthermore, results for the helium-diluted arsine imply that the plasma-enhanced desorption is mainly caused by physical bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 487
Copyright
Copyright © Materials Research Society 1990

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