Hostname: page-component-669899f699-qzcqf Total loading time: 0 Render date: 2025-04-25T22:57:57.903Z Has data issue: false hasContentIssue false
  • English
  • Français

Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

J. M. Poate ,
J. Linnros ,
F. Priolo ,
D. C. Jacobson ,
J. L. Batstone  and
M. O. Thompson
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
Get access

Abstract

A novel regime of crystal growth and segregation has been observed. Amorphous Si layers were uniformly doped with Au and epitaxial crystallization was induced in the temperature range 250–420°C using 2.5 MeV Ar ion irradiation. The Au segregation at the amorphous/crystal interface is analogous to behavior at liquid/solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6A/sec. This process results in the trapping of Au in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 399
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Pfann, W. G., Zone Melting, [John Wiley & Sons, New York, 1958].Google Scholar
[2] Chalmers, B., Principles of Solidification, [John Wiley & Sons, New York, 1964].Google Scholar
[3] Poate, J. M. and Mayer, J. W. Laser Annealing of Semiconductors, [Academic Press, 1982].Google Scholar
[4] Olson, G. L., Materials Research Society Proceedings 35, 25 (1985).Google Scholar
[5] Jacobson, D. C., Poate, J. M., and Olson, G. L., Appl. Phys. Lett. 48, 118 (1986); D. C. Jacobson, R. G. Elliman, J. M. Gibson, G. L. Olson, J. M. Poate, and J. S. Williams, Materials Research Society Proceedings 74, 327 (1987).CrossRefGoogle Scholar
[6] Poate, J. M., Jacobson, D. C., Williams, J. S., Elliman, R. G., and Boerma, D. O., Nucl. Instr. and Meth. B19/20, 480 (1987).Google Scholar
[7] Linnros, J., Holmen, G., and Svensson, B., Phys. Rev. B32, 2270 (1985).Google Scholar
[8] Elliman, R. G., Williams, J. S., Brown, W. L., Leiberich, A., Maher, D. M., and Knoell, R. V., Nucl. Instr. and Meth. B19/20, 435 (1987).Google Scholar
[9] Trumbore, F. A., Bell Syst. Tech. Journal 39, 205 (1960) and S. U. Campisano, unpublished data.Google Scholar
[10] Priolo, F., Poate, J. M., Jacobson, D. C., Linnros, J., Batstone, J. L., and Campisano, S. U., this conference.Google Scholar
[11] Poate, J. M. and Cullis, A. G., unpublished data.Google Scholar