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Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

J. M. Poate ,
J. Linnros ,
F. Priolo ,
D. C. Jacobson ,
J. L. Batstone  and
M. O. Thompson
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
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Abstract

A novel regime of crystal growth and segregation has been observed. Amorphous Si layers were uniformly doped with Au and epitaxial crystallization was induced in the temperature range 250–420°C using 2.5 MeV Ar ion irradiation. The Au segregation at the amorphous/crystal interface is analogous to behavior at liquid/solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6A/sec. This process results in the trapping of Au in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 399
Copyright
Copyright © Materials Research Society 1988

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References

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