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Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

J. M. Poate ,
J. Linnros ,
F. Priolo ,
D. C. Jacobson ,
J. L. Batstone  and
M. O. Thompson
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
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Abstract

A novel regime of crystal growth and segregation has been observed. Amorphous Si layers were uniformly doped with Au and epitaxial crystallization was induced in the temperature range 250–420°C using 2.5 MeV Ar ion irradiation. The Au segregation at the amorphous/crystal interface is analogous to behavior at liquid/solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6A/sec. This process results in the trapping of Au in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

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References

REFERENCES

[1] Pfann, W. G., Zone Melting, [John Wiley & Sons, New York, 1958].Google Scholar
[2] Chalmers, B., Principles of Solidification, [John Wiley & Sons, New York, 1964].Google Scholar
[3] Poate, J. M. and Mayer, J. W. Laser Annealing of Semiconductors, [Academic Press, 1982].Google Scholar
[4] Olson, G. L., Materials Research Society Proceedings 35, 25 (1985).Google Scholar
[5] Jacobson, D. C., Poate, J. M., and Olson, G. L., Appl. Phys. Lett. 48, 118 (1986); D. C. Jacobson, R. G. Elliman, J. M. Gibson, G. L. Olson, J. M. Poate, and J. S. Williams, Materials Research Society Proceedings 74, 327 (1987).CrossRefGoogle Scholar
[6] Poate, J. M., Jacobson, D. C., Williams, J. S., Elliman, R. G., and Boerma, D. O., Nucl. Instr. and Meth. B19/20, 480 (1987).Google Scholar
[7] Linnros, J., Holmen, G., and Svensson, B., Phys. Rev. B32, 2270 (1985).Google Scholar
[8] Elliman, R. G., Williams, J. S., Brown, W. L., Leiberich, A., Maher, D. M., and Knoell, R. V., Nucl. Instr. and Meth. B19/20, 435 (1987).Google Scholar
[9] Trumbore, F. A., Bell Syst. Tech. Journal 39, 205 (1960) and S. U. Campisano, unpublished data.Google Scholar
[10] Priolo, F., Poate, J. M., Jacobson, D. C., Linnros, J., Batstone, J. L., and Campisano, S. U., this conference.Google Scholar
[11] Poate, J. M. and Cullis, A. G., unpublished data.Google Scholar