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Saturation Behavior and Thermal Annealing Recovery of Light-Induced Degradation in a-SiGe:H Alloy Solar Cells

Published online by Cambridge University Press:  16 February 2011

S. Guha ,
X. Xu  and
J. Yang
S. Guha
Affiliation:
United Solar Systems Corp., 1100 W. Maple Rd., Troy, MI 48084
X. Xu
Affiliation:
United Solar Systems Corp., 1100 W. Maple Rd., Troy, MI 48084
J. Yang
Affiliation:
United Solar Systems Corp., 1100 W. Maple Rd., Troy, MI 48084
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Abstract

We have studied the saturation behavior and thermal annealing recovery of light-induced degradation in amorphous silicon-germanium (a-SiGe:H) alloy solar cells with various Ge contents. In contrast to amorphous silicon (a-Si:H) alloy cells, a-SiGe:H alloy cells with high microvoid density show similar thermal annealing behavior to those with lower microvoid density. Infrared studies show that unlike a-Si:H alloys, a-SiGe:H alloys with higher microvoid density do not show higher hydrogen or dihydride content. Moreover, even with a Ge-content of 41 %, there is saturation in degradation after light soaking for 1000 hours.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 675
Copyright
Copyright © Materials Research Society 1994

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References

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