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The Role of Structural Inhomogeneities on the Transport Properties of a-SiGe:H

Published online by Cambridge University Press:  26 February 2011

C. M. Fortmann
C. M. Fortmann*
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

The defects that result from light soaking a-Si Ge :H are studied over the alloy range 0<X<0.4. These defects act as recomdinltion centers with a large hole capture cross section. The creation rate for light-induced defects is independent of the Ge content for compositions investigated (x = 0 to 0.4). The transport changes that result from Ge incorporation do not result in the creation of a larger density of these centers; however, the electronic transport properties decrease with increasing Ge content. The possibility that this decrease is due to germanium clusters is explored.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 691
Copyright
Copyright © Materials Research Society 1988

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