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The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

Published online by Cambridge University Press:  16 February 2011

Yue Kuo
Yue Kuo*
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

An extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 249
Copyright
Copyright © Materials Research Society 1991

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References

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