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Role of Implant Energy on Defect Structures for Phosphorus Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

S. Prussin  and
Kevin S. Jones
S. Prussin
Affiliation:
TRW Electronics Group, Redondo Beach, CA 90278
Kevin S. Jones
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
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Abstract

A series of 18 wafers were implanted with phosphorus ions covering an energy range of 25 to 180 keV at a dose of 1 × 1015 cm−2 using a Waycool end station which provides good contact between the wafers and a thermal sink. Half the wafers had {100} surfaces and the other half {111} surfaces. The morphology of the as-implanted surface, defined by the thickness of the amorphous layer and whether that layer was submerged or lay at the surface, was affected by implant energy and surface orientation. After a 550°C regrowth and an activation anneal of 30 minutes at 900°C, the defect structures were evaluated by plan and cross-sectional transmission electron microscopy. A dear correlation was found between the implant morphology, the wafer orientation, and the defect structures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 191
Copyright
Copyright © Materials Research Society 1986

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References

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