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The Role of “Antenna” Structure on Thin Oxide Damage from Plasma Induced Wafer Charging

Published online by Cambridge University Press:  15 February 2011

Sychyi Fang  and
James P. McVittie
Sychyi Fang
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305-4070
James P. McVittie
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305-4070
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Abstract

A new, physically-based model has been developed to successfully explain the roles of device structure and plasma nonuniformity on charge damage. The model includes an equivalent circuit for the charging of MOS antenna structures exposed to a nonuniform plasma, and the use of SPICE, a circuit simulator, to correlate plasma measurement to breakdown measurements. The model is applied to analyze thin oxide damage in an O2 magnetron plasma asher. The simulation results show good agreement with experimental damage data of “antenna” capacitors using ramp voltage breakdown measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 231
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Wu, I.-W., Koyanagi, M., Holland, S., Huang, T.Y., Mikkelsen, J.C. Jr., Bruce, R.H., and Chiang, A., J. Electrochem. Soc., 136, 1638 (1989).Google Scholar
[2] Green, W. M., Kruger, J. B., and Kooi, G., J. Vac. Sci. Technol. B, 9(2), 366 (1991).CrossRefGoogle Scholar
[3] Gabriel, C.T., J. Vac. Sci. Technol. B, 9(2), 370 (1991).CrossRefGoogle Scholar
[4] Samukawa, S., Ext. Abstr. 38th meeting, the Japan Soc. of Appl. Phys., 499 (1991).Google Scholar
[5] Tsunokuni, K., et al., Solid State Devices and Materials, Tokyo, 195 (1987).Google Scholar
[6] Hashimoto, K., Matsunaga, D., and Kanazawa, M., Proc. Symp. Dry Process, 93 (1991).Google Scholar
[7] Fang, S., McCarthy, A.M., and McVittie, J.P., Proc. 3rd International Symp. on ULSI, Electrochem. Soc., 91(11), (473) 1991.Google Scholar
[8] Fang, S., and McVittie, J.P., to be published in IEEE Electron Device Lett, June, 1992.Google Scholar
[9] Paranjpe, A. P., McVittie, J. P., and Self, S. A., J. Appl. Phys., 67, 6718 (1990).Google Scholar
[10] Cook, J. G., Das, S. R., and Quance, T. A., J. Appl. Phys., 68, 1636 (1990).CrossRefGoogle Scholar