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Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties

Published online by Cambridge University Press:  15 February 2011

F. González ,
M. McQueen ,
R. Barbour  and
G. A. Rozgonyi
F. González
Affiliation:
Micron Technology Inc., 8000 S. Federal Way, P. O. Box 6, Boise, ID 83707–0006, fgonzalez@micron.com
M. McQueen
Affiliation:
Micron Technology Inc., 8000 S. Federal Way, P. O. Box 6, Boise, ID 83707–0006, fgonzalez@micron.com
R. Barbour
Affiliation:
Micron Technology Inc., 8000 S. Federal Way, P. O. Box 6, Boise, ID 83707–0006, fgonzalez@micron.com
G. A. Rozgonyi
Affiliation:
Materials Science and Engineering Dept., North Carolina State University, Raleigh, NC 27695–7916
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Abstract

Thermal cycles in advanced CMOS processing can nucleate an annular ring of oxygen precipitate-induced stacking faults (OSF-ring) via activation of bulk nuclei grown-in during the crystal pulling process. Because the OSF-ring can adversely affect device characteristics, it is important that substrates with OSF-ring characteristics be detected early in the process. Results are presented in this paper from a typical DRAM device which show that the ring can act either in a beneficial gettering mode or as a device-degrading zone, depending on the depth distribution of the OSF-ring defects and the background iron impurity concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 119
Copyright
Copyright © Materials Research Society 1997

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References

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