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Reversible Force-Resistivity Behavior of Thin Films of the TTF-Tcnq Family

Published online by Cambridge University Press:  15 February 2011

W. Vollmann  and
H.-U. Sonntag
W. Vollmann
Affiliation:
Department of Physics, Technical University of Chemnitz, 09107 Chemnitz, Germany, vollmann@physik.tu-chemnitz.de
H.-U. Sonntag
Affiliation:
Department of Physics, Technical University of Chemnitz, 09107 Chemnitz, Germany, vollmann@physik.tu-chemnitz.de
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Abstract

The electrical properties of vacuum sublimed thin films of TTF-TCNQ and its derivatives mainly are determined by electron barriers at grain boundaries. The electrical conductivity is thermal activated and exhibits a significant dependence on a force acting perpenticularly to the film plane. The sample resistance R decreases continiously with increasing force F. TCNQ thin films on steel show a similar R-F relation. The effect has been observed already at forces of 1 N, but also up to about 60 kN. An explanation of these phenomena is given by a grain boundary limited hopping mechanism with pressure dependent potential barrier width and height. Morphology investigations by SEM support the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 467
Copyright
Copyright © Materials Research Society 1997

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