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Response Time Measurements and Flying Spot Technique in Microcrystalline Silicon Solar Cells

Published online by Cambridge University Press:  17 March 2011

R. Schwarz ,
P. Sanguino ,
S. Koynov ,
M. Fernandes ,
F. Maçarico ,
P. Louro  and
M. Vieira
R. Schwarz
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, Portugal Electronics and Communications Department, Instituto Superior de Engenharia de Lisboa, ISEL, P-1940-014 Lisboa, PortugalTel: +351-21-841 7775, e-mail:rschwarz@fisica.ist.utl.pt
P. Sanguino
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, Portugal
S. Koynov
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, Portugal
M. Fernandes
Affiliation:
Electronics and Communications Department, Instituto Superior de Engenharia de Lisboa, ISEL, P-1940-014 Lisboa, Portugal
F. Maçarico
Affiliation:
Electronics and Communications Department, Instituto Superior de Engenharia de Lisboa, ISEL, P-1940-014 Lisboa, Portugal
P. Louro
Affiliation:
Electronics and Communications Department, Instituto Superior de Engenharia de Lisboa, ISEL, P-1940-014 Lisboa, Portugal
M. Vieira
Affiliation:
Electronics and Communications Department, Instituto Superior de Engenharia de Lisboa, ISEL, P-1940-014 Lisboa, Portugal
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Abstract

Transverse charge collection in a p-i-n structure based on microcrystalline silicon and lateral transport in a single intrinsic layer were analyzed using transient photoconductivity (TPC), steady-state photocarrier grating analysis (SSPG), and the flying spot technique (FST). Photocurrents were excited either with HeNe laser light (633 nm, intensity about 20 mW/cm2) or with 5 ns pulses from a Nd:YAG laser (532 nm, peak power of about 500 kW/cm2 with 5 mJ pulses). The response time τR varied greatly from about 3 ms at low intensity down to a few μs under pulsed laser excitation. The minority carrier diffusion length LD measured by FST in diode structures was usually larger than values obtained from the SSPG method applied to intrinsic microcrystalline layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A32.4
Copyright
Copyright © Materials Research Society 2000

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References

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