Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-12T05:45:01.570Z Has data issue: false hasContentIssue false
  • English
  • Français

Resonating UHF Study on Electron Correlation in a Ground State of Two Electrons Confined in 2D Quantum Dot

Published online by Cambridge University Press:  08 February 2012

Takuma Okunishi  and
Kyozaburo Takeda
Takuma Okunishi
Affiliation:
Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555, Japan
Kyozaburo Takeda
Affiliation:
Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555, Japan
Get access

Abstract

We theoretically study the spatial and temporal fluctuation of two electrons confined in a semiconductor quantum dot (QD). Eigenstates are determined by the resonating unrestricted Hartree-Fock (res-UHF) approach in order to take into account the electron correlation via the configuration interaction (CI). The time-dependent (TD) wave function is, then, expanded by the UHF solutions, and the CI treatment is combined with the TD Schrödinger equation (TD-CI). The present TD-CI approach has an advantage to study how the electron correlation fluctuates the multi-electron state spatially and/or temporally through the multi-reference description of many-electron wave functions.

Keywords

simulationelectronic structureelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1423: Symposium RR – Dynamics in Confined Systems and Functional Interfaces , 2012 , mrsf11-1423-rr04-09
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Reimann, S. M. and Manninen, M., Rev. Mod. Phys. 74, 1283 (2002).Google Scholar
2. Yannouleas, C. and Landman, U., Phys. Rev. Lett. 82, 5325 (1999).Google Scholar
3. Hirose, K. and Wingreen, N. S., Phys. Rev. B 59, 4604 (1999).Google Scholar
4. Räsänen, E., Saarikoski, H., Puska, M. J., and Nieminen, R. M., Phys. Rev. B 67, 035326 (2003).Google Scholar
5. Creffield, C. E., Hausler, W., Jefferson, J. H., and Sakar, S., Phys. Rev. B 59, 10719 (1999).Google Scholar
6. Fukutome, H., Prog. Theor. Phys. 80, 417 (1988).Google Scholar
7. Tomita, N., Ikawa, A., and Fukutome, H., J. Phys. Soc. Jpn. 62, 4338 (1993); 63, 191(1994).Google Scholar
8. Okunishi, T., Negishi, Y., Muraguchi, M., and Takeda, K., Jpn. J. Appl. Phys. 48, 125002 (2009).Google Scholar
9. Park, T. J. and Light, J. C., J. Chem. Phys. 85, 5870 (1986).Google Scholar
10. In GaAs system, for instance, the effective atomic unit is given using the effective electron mass as 0.067m0 and the dielectric constant as 12.4ε0. Thus the effective atomic unit for length is 9.89nm and that for energy is 11.61meV. Google Scholar