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Removing Grain Boundary Effects in Polycrystalline Silicon Using a Minority Carrier Mirror Concept

Published online by Cambridge University Press:  22 February 2011

F. Y. T. Kai ,
M. A. Jackson ,
M. Thayer  and
W. A. Anderson
F. Y. T. Kai
Affiliation:
Department of Electrical and Computer EngineeringState University of New York at Buffalo, 4232 Ridge Lea Road Amherst, New York 14226
M. A. Jackson
Affiliation:
Department of Electrical and Computer EngineeringState University of New York at Buffalo, 4232 Ridge Lea Road Amherst, New York 14226
M. Thayer
Affiliation:
Department of Electrical and Computer EngineeringState University of New York at Buffalo, 4232 Ridge Lea Road Amherst, New York 14226
W. A. Anderson
Affiliation:
Department of Electrical and Computer EngineeringState University of New York at Buffalo, 4232 Ridge Lea Road Amherst, New York 14226
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Abstract

The boron minority carrier mirror (MCM) concept has been applied to Wacker poly-Si for passivation of active grain boundaries (GB). Photovoltaic, spectral response, laser beam induced current, electron beam induced current and interface state data show the MCM process to significantly improve solar cell performance. For example, an efficiency improvement from 6.4% to 8.8% was observed in part of the study. This appears to be a simple technique to produce stable solar cells with future application to fine grain poly-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 633
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Lu, N. C. C., Gerzberg, L., Lu, C. Y. and fleindl, J. D., IEEE Trans. Electron Devices, Vol. ED-28, No. 7 (1981).Google Scholar
2. Mead, C. and Conway, L., Introduction to VLSI Systems, Addison-Wesley (1980).Google Scholar
3. Mahan, G. D., Levinson, L. M. and Philipp, H. R., Appl. Phys. Lett., 33, 830 (1978).Google Scholar
4. Okada, K., Aomura, K., Nokubo, J. and Shiba, H., IEEE ISSCC Dig. Tech. Papers, 100 (1978).Google Scholar
5. Tanimoto, M., Murota, J., Ohmori, T. and Ieda, N., IEEE Trans. Electron Devices, Vol. ED-27, 517 (1980).Google Scholar
6. Okada, K., Aomura, K., Nakamura, T. and Shiba, H., IEEE J. Solid State Circuits, Vol. SC-14, 307 (1979).Google Scholar
7. Pulfrey, D. L., Photovoltaic Power Generation, Van Nostrand Reinhold (1978).Google Scholar
8. Shockley, William, Electrons and Holes in Semiconductors (1950).Google Scholar
9. Kai, F., Rajeswaran, G., Jackson, M. A., Rao, V. J. and Anderson, W. A., 16th IEEE Photovoltaic Conference 1982.Google Scholar
10. Rajeswaran, G., Thayer, N., Rao, V. J. and Anderson, W. A., Grain Boundaries in Semiconductors, Mat. Res. Soc., p. 235 (1981).Google Scholar
11. Bean, K. E., IEEE Trans. Electron Devices, ED-25, 1185 (1978).CrossRefGoogle Scholar
12. Rao, V. J., Anderson, W. A. and Kai, F., Grain Boundaries in Semiconductors, Hat. Res. Soc., p. 229 (1981).Google Scholar