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Reliability Study of On-Chip Interconnects : Prediction of Electromigration Resistance on A Short Time Scale

Published online by Cambridge University Press:  25 February 2011

W. De Ceuninck ,
V. D’Haeger ,
H. Stulens ,
L. De Schepper  and
L.M. Stals
W. De Ceuninck
Affiliation:
Materials Physics Division, Institute for Materials Research (IMO), Limburg University Centre, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268826, Fax ++32-11-268899 DESTIN N.V., Science Park, University Campus, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268811 Fax ++32-11-268899
V. D’Haeger
Affiliation:
Materials Physics Division, Institute for Materials Research (IMO), Limburg University Centre, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268826, Fax ++32-11-268899
H. Stulens
Affiliation:
Materials Physics Division, Institute for Materials Research (IMO), Limburg University Centre, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268826, Fax ++32-11-268899
L. De Schepper
Affiliation:
Materials Physics Division, Institute for Materials Research (IMO), Limburg University Centre, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268826, Fax ++32-11-268899 DESTIN N.V., Science Park, University Campus, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268811 Fax ++32-11-268899
L.M. Stals
Affiliation:
Materials Physics Division, Institute for Materials Research (IMO), Limburg University Centre, B-3590 Diepenbeek (Belgium) Tel.++32-l 1-268826, Fax ++32-11-268899
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Abstract

A new method is presented to evaluate the resistance to electromigration (EM) of on-chip interconnects. The method is based on high resolution in-situ electrical measurements. In this way, the electrical resistance is measured with high accuracy during electromigration at high temperature. After careful analysis of the isothermal results, it was found that the metallization can be characterized by one parameter: the rate of resistance change (RRC). It is shown that the RRC is very sensistive to the electromigration performance. The performance level of the different metallizations can easily be detected and can be qualified in a quantitative way. The results are also compared with classic Mean Time To Failure (MTTF) results and it is found that there exists an almost linear relationship between the RRC results and the MTTF results. However, the in-situ technique offers the benifit that a metallization can be characterized on a time scale as short as a few days, which is certainly not the case for the classical techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 663
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 De Schepper, L., De Ceuninck, W., Stulens, H., Stals, L.M. and Van den Berghe, R., Hybrid Circuits 23, 5(1990)Google Scholar
2 Black, J.R., Proc. IEEE 57, 1587 (1969)Google Scholar
3 Pasco, R.W. and Schwartz, J.A., Solid State Electron. 26, 445 (1983)CrossRefGoogle Scholar
4 Li, Z., Bauer, L., Mahajan, S. and Milnes, A.G., J. Appl. Phys. 72, 1821 (1992)Google Scholar
5 D’Haeger, V., Stulens, H., De Ceuninck, W., De Schepper, L., Gallopyn, G., De Pauw, P. and Stals, L.M., Proceedings of ESREF93-Bordeaux 141 (1993)Google Scholar