Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-02-05T15:34:37.138Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

Published online by Cambridge University Press:  01 February 2011

M. K. Hudait ,
Y. Lin ,
C. L. Andre ,
P. M. Sinha ,
C. A. Tivarus ,
J. P. Pelz ,
D. M. Wilt  and
S. A. Ringel
M. K. Hudait
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
Y. Lin
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
C. L. Andre
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
P. M. Sinha
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
C. A. Tivarus
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210, USA
J. P. Pelz
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210, USA
D. M. Wilt
Affiliation:
NASA Glenn Research Center, Cleveland, OH 44135, USA
S. A. Ringel
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
Get access

Abstract

Si-doped InAsxP1-x layers with As mole fractions ranging from 0.05 to 0.50 were grown on InAsxP1-x step-graded buffer layers on InP substrates by solid source molecular beam epitaxy. The growth parameters consisted of a P:In flux ratio of 7:1, a growth temperature of ∼ 485°C, a growth rate of 2.2 Å/s, and an As:In flux ratio of 0.37-2.36 for varying As mole fractions. The As mole fraction and the layer relaxation were determined using triple axis x-ray diffraction measurements. Near complete relaxation (>93%) was achieved for all Si-doped InAsxP1-x epilayers. The structural morphology indicated that the InAsxP1-x graded buffer layers were effective in relieving the lattice mismatch strain as evidenced by a well-developed crosshatch morphology and low rms surface roughness. The electron concentration, mobility, and Si donor activation energy for each InAsxP1-x composition were determined using temperature dependent Hall measurements. At a constant electron carrier concentration of %3.5×1016 cm-3, the 300 K carrier mobility increased from 2700 to 4732 cm2/V-sec with increasing As mole fraction from 0.05 to 0.50.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K10.2
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. David, J. P. R., Hopkinson, M., Stavrinou, P. N., and Haywood, S. K., J. Appl. Phys. 78, 3330 (1995)Google Scholar
2. Leyes, M. R., Titze, H., Samuelson, L., and Petruzzello, J., J. Crystal Growth 93, 504 (1988)Google Scholar
3. Miura, T., Onabe, K., Zhang, X., Nitta, Y., Fukatsu, S., Shiraki, Y., and Ito, R., Jpn. J. Appl. Phys., Part 2 30, L664 (1991).Google Scholar
4. Anan, T., Sugou, S., Nishi, K., and Ichihashi, T., Appl. Phys. Lett. 63, 1047 (1993)Google Scholar
5. Yang, B. X., He, L., and Hasegawa, H., J. Electron. Mater. 25, 379 (1996)Google Scholar
6. Hess, R. R., Moore, C. D., and Goorsky, M. S., J. Phys. D: Appl. Phys. 32, A16 (2000).Google Scholar
7. Shiryaev, S. Y., Jensen, F., and Petersen, J. W., Appl. Phys. Lett. 64, 3305 (1994)Google Scholar
8. Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenco, M., and Goodhew, P. J., J. Crystal Growth 149, 1 (1995)Google Scholar
9. Lehey, R.F., Ballman, A. A., Dewinter, J. C., Nahory, R. E., and Pollack, M. A., J. Electron. Mater. 9, 561 (1980)Google Scholar
10. Enhenreich, H., J. Phys. Chem. Solids 12, 97 (1959)Google Scholar
11. Chin, V. W. L., J. Phys. Chem. Solids 53, 897 (1992)Google Scholar
12. Stanely, C. R., Holland, M. C., Kean, A. H., Stanaway, M. B., Grimes, R. T., and Chamberlain, J. M., Appl. Phys. Lett. 64, 3305 (1994)Google Scholar
13. Chin, V. W. L., Osotchan, T., and Tansley, T. L., J. Phys. Chem. Solids 53, 897 (1992)Google Scholar