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Regrowth of Implanted–Amorphous Si

Published online by Cambridge University Press:  28 February 2011

P. Ling ,
N.R. Wu  and
J. Washburn
P. Ling
Affiliation:
ARACOR. 1223E Arques Ave, Sunnyvale, CA 94086
N.R. Wu
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory and Department of Materials Science and Engineering University of California, Berkeley, California 94720
J. Washburn
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory and Department of Materials Science and Engineering University of California, Berkeley, California 94720
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Abstract

A two dimensional model of nucleation and growth is described which is consistent with the following experimental phenomena observed in the regrowth of ion-implanted silicon: (1) Substrate orientation effect on regrowth kinetics. (2) Impurity effects on regrowth kinetics. (3) The activation energy dependence of regrowth rate. (4) Impurity redistribution and supersaturation effect.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 179
Copyright
Copyright © Materials Research Society 1986

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References

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