Hostname: page-component-5b777bbd6c-skqgd Total loading time: 0 Render date: 2025-06-21T22:04:47.629Z Has data issue: false hasContentIssue false
  • English
  • Français

Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

Published online by Cambridge University Press:  15 February 2011

C.-Y. Wei ,
W. Tantraporn ,
W. Katz  and
G. Smith
C.-Y. Wei
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
W. Tantraporn
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
W. Katz
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
G. Smith
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
Get access

Abstract

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 419
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Shannon, J. M., Appl. Phys. Lett., 24 (1974) 369.Google Scholar
2 Bindell, J. B., Meller, W. M. and Labuda, E. F., IEEE Trans. Electron Devices, 27 (1980) 420.Google Scholar
2a Li, S. S., Kim, J. S. and Wang, K. L., IEEE Trans. Electron Devices, 27 (1980) 1310.CrossRefGoogle Scholar
3 Capone, B., Skolnik, L., Taylor, R., Ewing, E., Cantella, M., Klein, J. and Kosonocky, W., Proc. Soc Photo-Opt. Instrum. Eng., 197 (1979) 134.Google Scholar
4 Tantraporn, W., J. Appl. Phys., 41 (1970) 4669.Google Scholar
5 Shannon, J. M., Solid-State Electron., 19 (1979) 537.Google Scholar
6 Haru, T. and Shibata, Y., Proc. IEEE, 63 (1975) 1533.Google Scholar