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Recrystallization of Oxygen Contaminated Al Films

Published online by Cambridge University Press:  28 February 2011

G.J. Van Der Kolk  and
M.J. Verkerk
G.J. Van Der Kolk
Affiliation:
Philips Research Labs, 5600 JA Eindhoven, the Netherlands
M.J. Verkerk
Affiliation:
Philips Research Labs, 5600 JA Eindhoven, the Netherlands
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Abstract

Al was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.

For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.

For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 337
Copyright
Copyright © Materials Research Society 1986

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