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Recrystallization Characteristics of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

Rodney A. Herring  and
Eric M. Fiore
Rodney A. Herring
Affiliation:
Martin Marietta Laboratories, 1450 South Rolling Road, Baltimore, MD 21227-3839.
Eric M. Fiore
Affiliation:
Martin Marietta Laboratories, 1450 South Rolling Road, Baltimore, MD 21227-3839.
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Abstract

The microstructure of high-energy (0.5–6.0 MEV) As-ion implanted Si and rapid thermal annnealed (RTA'd) Si has been studied by transmission electron microscopy (TEM). The implantations formed buried amorphous layers that recrystallized during RTA at different temperatures and became either single crystal or polycrystalline depending on their implation energy and fluence. At energies > 2.5 MeV and fluences < 1015 cm−2, recrystallization occurred below 400°C and regowth was single crystal. At an energy of 6 MeV and fluence of 5 × 1015 cm−2 recrystallization occurred above 600°C and regrowth was polycrystalline. When the implantation energy and fluence were reduced to 0.5 MeV and 2 × 1014 cm−2, respectively, recrystallization occurred above 600°C and regrowth was polycrystalline. The above results are explained by both the formation mechanisms of amorphous Si resulting from ion implantation and the structural order of a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 441
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Kirillov, D. et al., Mater. Res. Soc. Symp. Proc. 52, 131 (1986).Google Scholar
2. Cannavo, S., Mater. Res. Soc. Symp. Proc. 51, 329 (1986).Google Scholar
3. Elliman, R.B. et al., Mater. Res. Soc. Symp. Proc. 51, 319 (1986).Google Scholar
4. Maher, D.M. et al., Mater. Res. Soc. Symp. Proc. 52, 93 (1986).CrossRefGoogle Scholar
5. Herring, R.A., Proc. 45 Annu. Meet., Electron Microsc. Soc. Am. (1987).Google Scholar
6. Fiore, E.M. and Herring, R.A., Mater. Res. Soc. Proc. Symp. W. This conference.Google Scholar
7. Howe, L.M. et al., Nucl. Instrum. Methods, 182/183, 143 (1981).Google Scholar
8. Howe, L.M. et al., Nucl. Instrum. Methods 170, 419 (1980).Google Scholar
9. Herring, R.A. et al., Microscopy of Semiconductor Materials, Oxford, England, April 1987. To be published.Google Scholar
10. Seidman, D.N. et al., Mater. Res. Soc. Symp. Proc. 51, 349 (1986).Google Scholar
11. Tu, K.N. et al., J. Appl. Phys. 43, (10), 4262 (1972).Google Scholar
12. Adekoya, W.O. et al., Appl. Phys. Lett. 49 (21), 1429 (1986).CrossRefGoogle Scholar
13. Donovan, E.P. et al., J. Appl. Phys. 57, 1795 (1985).Google Scholar
14. Elliman, R.G. et al., Mater. Res. Soc. Symp. Proc. 51, 389 (1986).Google Scholar