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Reconstruction of (100) Silicon/Disilicide Interfaces

Published online by Cambridge University Press:  21 February 2011

D. Loretto ,
J. M. Gibson ,
Alice E. White ,
K. T. Short ,
R. T. Tung ,
S. M. Yalisove  and
J. L. Batstone
D. Loretto
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
Alice E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 0797
J. L. Batstone
Affiliation:
Dept. of Materials Science and Engineering, The University, P. O. Box 147, Liverpool, L69 3BX, U. K.
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Abstract

A 2×1 reconstruction has been observed at the Si/NiSi2(100) and Si/CoSi2(100) interfaces. The reconstruction has been found in both ion-implanted (mesotaxial) material and in material grown by molecular beam epitaxy (MBE). The reconstruction is apparent in HREM images obtained from <110> cross sections and in transmission electron diffraction (TED) patterns from (100) orientation samples. We propose that the reconstruction is due to a layer of dimerised silicon atoms at the interface. We conclude that the 2×1 reconstruction is a low energy state of the silicon/disilicide(100) interface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 97
Copyright
Copyright © Materials Research Society 1989

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References

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