Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-04T16:35:48.024Z Has data issue: false hasContentIssue false
  • English
  • Français

Recombination of Excess Carriers at High Excitation Density in Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

M. Kunst ,
C. Haffer  and
C. Swiatkowski
M. Kunst
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Haffer
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
Get access

Abstract

Excess electron-hole recombination at high excitation densities in a-Si:H is investigated by comparison of the transient photoconductivity during and just after excitation in the nanosecond time range to numerical models. A simple one parameter recombination model fits the experimental data satisfactorily. An extension of the model where deep trapping is taken into account explains also the transient photoconductivity in Boron doped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 461
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Vanderhaghen, R., Mourchid, A., Hulin, D., Young, D.A., Nighan, W.L. Jr., and Fauchet, P.M. J.Non-Cryst.Solids 137&138. 543 l991.Google Scholar
[2] Esser, A., Heesel, H., Kurz, H., Wang, C., Parsons, G.N., and Lucovsky, G., Phys.Rev. B47., 3593 l993.Google Scholar
[3] Grünow, P., Herm, D., Könenkamp, R., Küppers, U., Kunst, M., Neitzert, H.C. and Werner, A. Mat.Res.Soc.Symp.Proc. Vol.149, 363 (1989)Google Scholar
[4] Kunst, M., Neitzert, H.-C. and Ruebel, H., Phys.Rev. B44, 1081 (1991)Google Scholar
[5] Kunst, M. and Neitzert, H.-C., J.Appl.Phys. 69, 8320 (1991)Google Scholar
[6] Madan, A. and Shaw, M.P., The Physics and Applications of amorphous Semiconductors (Academic, New York 1988) Google Scholar