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Recent Progress in AlGaN/GaN Based Optoelectronic Devices

Published online by Cambridge University Press:  21 February 2011

M. A. Khan ,
Q. Chen ,
C. J. Sun ,
J. W. Yang  and
M. S. Shur
M. A. Khan
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
Q. Chen
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
C. J. Sun
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
J. W. Yang
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
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Abstract

We review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

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References

REFERENCES

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