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Real-Time Studies of Interface Structural Dynamics

Published online by Cambridge University Press:  21 February 2011

Walter P. Lowe  and
Roy Clarke
Walter P. Lowe
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Roy Clarke
Affiliation:
Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109
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Abstract

We present dynamic structural studies of thin films and their interface with underlying substrates using real-time x-ray diffraction. Using synchrotron light we have observed, in real-time, interface dynamics in semiconductor systems such as GexSi(i−x)/Si. The measurements show that under large temperature changes thin epitaxial layers may behave cooperatively to modify the overall strain profile. Dynamic behavior is exhibited in a series of discontinuities in the perpendicular lattice constant of the overlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 367
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Lemonnier, M., Fourme, R., Rousseaux, F. and Kahn, R., Nucl. Instrum. Methods, 152, 173 (1978).Google Scholar
2. Schildkamp, W., Nucl. Instrum. Methods, A266, 479 (1988).CrossRefGoogle Scholar
3. Rodricks, B., Clarke, R., Smither, R. and Fontaine, A., Rev. Sci. Instrum. 60(8), 2586 (1989).Google Scholar
4. MacHarrie, R. A., Lowe, W., Clarke, R. and Sims, G., submitted to Rev. of Sci. Instr.Google Scholar
5. Shenoy, G. K., Niccaro, P. J. and Mills, D. M., Characteristics of the 7-GeV Advanced Photon Source: A Guide for Users, ANL–88–9 (1988).Google Scholar
6. Kasper, E. and Bean, J. C., eds. Silicon Molecular Beam Epitaxy, 1 (CRC Press, Boca Raton, FL, 1988).Google Scholar
7. Lowe, W., MacHarrie, R. A., Bean, J. C., Peticolas, L., Clarke, R., Dos Passos, W., Brizard, C. and Rodricks, B., Phy. Rev. Lett. 67 2513 (1991).CrossRefGoogle Scholar
8. Clarke, R., Dos Passos, W., Lowe, W., Rodricks, B. and Brizard, C., Phy. Rev. Lett., 66 317 (1991).Google Scholar
9. Zhdanova, V. V. and Kakna, M. G., Samadashvili, T. Z., Izv. Akad. Nauk. Neorg. Mater. 3, 1263 (1967).Google Scholar
10. Frenkel, Y. I. and Kontorova, T., Zh. Eksp. Teor. Fiz. 8, 1340 (1938).Google Scholar
11. Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974); 29, 273 (1975); 32, 265 (1976).Google Scholar
12. Hull, R. and Bean, J. C., J. Vac. Sci. Tech. A. 4, 2580 (1989).CrossRefGoogle Scholar