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Reactive Deposition of a-Silicon and Si-Based Alloys

Published online by Cambridge University Press:  28 February 2011

J. Hanna ,
S. Oda ,
H. Shibata ,
H. Shirai ,
A. Miyauchi ,
A. Tanabe ,
K. Fukuda ,
T. Ohtoshi ,
O. Tokuhiro  and
H. Nguyen
...Show all authors
J. Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
S. Oda
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
H. Shibata
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
H. Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
A. Miyauchi
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
A. Tanabe
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
K. Fukuda
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
T. Ohtoshi
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
O. Tokuhiro
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
H. Nguyen
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
I. Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama, Japan 227
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Abstract

High photoconductive a-Si:H(F) and St-based alloys were prepared from “precursors” made by oxidation of silane with F2 or reduction of SiFn (n=1,2,) with atomic hydrogen. Both crystalline and amorphous silicon were prepared at will, in the latter case, by controlling the flow of hydrogen. A marked reduction in the localized states in the vicinity of valence band was eatablished in the a-Si:H(F) prepared under optimal condition. A novel photoconductive film with high photoconductive gain for near-tr light was successfully made by multiplying a-Si:H/a-SiGe:H(F) periodically by a new preparation technique without a rise in the dark conductivity.

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References

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