Hostname: page-component-54dcc4c588-br6xx Total loading time: 0 Render date: 2025-09-14T14:57:14.817Z Has data issue: false hasContentIssue false
  • English
  • Français

RCA and IMEC/SC2 Clean: Metallic Immunity and Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

Weidong Chen ,
Tushar Dhayagude ,
Prasad Chaparala ,
Esin Demirlioglu ,
Mohsen Shenasa ,
Twan Bearda ,
Sophia Arnauts  and
Marc Meuris
Weidong Chen
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Tushar Dhayagude
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Prasad Chaparala
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Esin Demirlioglu
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Mohsen Shenasa
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Twan Bearda
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
Sophia Arnauts
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
Marc Meuris
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
Get access

Abstract

Dilute HF/RCA and IEMC/SC2 cleans have been evaluated on two process lines with different metallic contamination levels. VPD-DSE-TXRF and SPV techniques were used to monitor the metallic contamination. Gate oxide integrity(GOI) tests were performed on several structures. Both HF/RCA and IMEC/SC2 cleans have shown good Qbd and Ebd results for the clean process line. Lower Qbd and Ebd values were obtained for both cleans in the relatively contaminated process line. These results suggest that poor GOI is related to the metallic contamination in the oxide or at the SiO2/Si interface.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 225
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

Footnotes

*

Fujitsu Microelectronic Inc., San Jose, CA 95134.

References

REFERENCES

1. Meuris, M., Verhaverbeke, S., Merrtens, P. W., Schmidt, H. H., Rotondrro, A. L. P., Heyns, M. M. and Philipossian, A., “A New Cleaning Concept for particle and metal removal on Si Surfaces” i22, IMEC anneal report(1993).Google Scholar
2. Meuris, M., Heyns, M., “The IMEC Clean Concept”, Proc. Of 2nd Int. Symp. UCPSS, Bruges, Belgium, (1994).Google Scholar
3. Wolke, K., Schenlk, M., Silvestre, P., Bellandi, E., alessandri, M., Ingrid Cornelissen, Marc Meuris, “Comparison of RCA and IMEC clean(HF last) type cleaning sequences in full production environment”, Proc. Of 3rd Int. Symp. UCPSS, Antwerp, Belgium, p. 199(1996).Google Scholar
4. Kern, W. and Poutinen, D., “Clean Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology”, RCA Review 31, P. 187(1970).Google Scholar
5. Resnick, P. J., Adkins, C. L. J., Clews, P.J., Thomas, E. V., and Korbe, N. C., “A Study of Cleaning Performance and Mechanisms in Dilute SC-1 Processing”. Res. Soc. Symp. Proc. Vol.386, P21(1995).CrossRefGoogle Scholar
6. Hurd, T., Mertens, P., Hall, L. and Heyns, M., “Metal Removal without Particle Addition: Optimization of the Dilute HCI Clean”, Proc. Of 2nd Int. Symp. UCPSS, Bruges, Belgium, p42(1994).Google Scholar
7. Veheverbeke, S., Parker, J., McConnell, C., “Quantitative Model for the SC-1 Wet processing”, Proc. Of 3rd Int. Symp. UCPSS, Antwerp, Belgium, p. 153(1996).Google Scholar
8. Henley, Worth B., Jastrzebski, Lubek, and Haddad, Nadim F., “Effects of Residual Iron Contamination induced during Wet Chemical Processing on Thin Oxide Breakdown and Reliability Characteristics” Proc. Third Int. Symp. On cleaning Tech. In Semicon. Device Manufacturing, J. Ruzyllo, Ed. ECS proc. 94–7(1994).Google Scholar