Hostname: page-component-669899f699-ggqkh Total loading time: 0 Render date: 2025-04-24T23:06:29.691Z Has data issue: false hasContentIssue false
  • English
  • Français

Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

Published online by Cambridge University Press:  25 February 2011

S.P. Russo ,
R.G. Elliman ,
P.N. Johnston  and
G.N. Pain
S.P. Russo
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
P.N. Johnston
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
G.N. Pain
Affiliation:
Telecom Australia Research Laboratories, 3168, Australia
Get access

Abstract

The techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 23
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Pain, G.N., Gao, D., Glanvill, S., Gwynn, P., Kibel, M., Kwietniak, M., Leech, P., Rossouw, C., Stevenson, A., Thompson, J., Warminski, T.,LWielunski, . and Wilkins, S., J.Vac.Sci.Technol. A 8(2), 1990.Google Scholar
[2] Mullin, J.B., Giess, J., Irvine, S.J.C., Gough, J.S. and Royle, A. in Materials for Infrared Detectors and Sources, edited by Farrow, R.F.C., Schetzina, J.F. and Cheung, J.T. (Mater.Res.Soc.Proc. 90, Pittsburgh, PA 1987) pp. 367–378.Google Scholar
[3] Clayton, E., Duerden, P. and Cohen, D.D., Nucl.Instr. and Meth. 180, 541 (1981); B22 (1-3), 64-67 (1987).CrossRefGoogle Scholar
[4] Debertin, K. and Helmer, R.G. in Gamma and X-ray Spectrometry with Semiconductor Detectors (Elsevier Science Publishers, New York, 1988), p. 48.Google Scholar
[5] Chu, W., Mayer, J.W and Nicolet, M. in Backscattering Spectrometry (Academic Press, New York, 1978).Google Scholar
[6] Doolittle, L.R., Nucl.Instr.and Meth., B9, 422–351 (1985); B15, 227 (1986).Google Scholar
[7] Feldman, L.C., Mayer, J.W. and Picraux, S.T. in Materials Analysis by Ion Channeling (Acedemic Press, New York, 1982).Google Scholar