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Rapid Thermal Processing of Thin Film Electroluminescent Display Materials

Published online by Cambridge University Press:  26 February 2011

D. M. Kim ,
F. Qian ,
R. Solanki ,
R. T. Tuenge  and
C. N. King
D. M. Kim
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
F. Qian
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
R. Solanki
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
R. T. Tuenge
Affiliation:
Planar Systems, Inc., 1400 N.W. Compton Drive, Beaverton, OR 97006
C. N. King
Affiliation:
Planar Systems, Inc., 1400 N.W. Compton Drive, Beaverton, OR 97006
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Abstract

Rapid thermal annealing of the electroluminescent phosphors ZnS:Mn, SrS:CeF3 and ZnS:SmCl3 has been examined as a function of annealing temperature (500–750°C) and time of exposure (10–120 sec.). The resulting brightness and efficiency of luminescence are correlated with the different processing conditions used. The results indicate that the brightness can be significantly improved from the value obtained with furnace annealing without causing film delamination, blistering or fatigue effect.

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References

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