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Rapid Thermal Process-Induced Defects : Gettering of Internal Contaminants

Published online by Cambridge University Press:  25 February 2011

Bouchaib Hartiti ,
Wolfgang Eichhammer ,
Jean-Claude Muller  and
Paul Siffert
Bouchaib Hartiti
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Wolfgang Eichhammer
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Jean-Claude Muller
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), B.P. 20, F-67037 STRASBOURG CEDEX, France
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Abstract

We show in this study that RTP-induced defects analysed by Deep Level Transient Spectroscopy (DLTS) are related to residual impurities present in as-grown silicon wafers. For one particular material an activation of a specific residual metallic impurity was observed in the temperature range 800 - 1000°C. This impurity can be returned to an electrically inactive precipitated form by classical thermal annealing (CTA) with a slow cooling rate or neutralized by means of low-energy hydrogen ion implantation.

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References

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