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(Rapid) Thermal Nitridation of SiO2 films

Published online by Cambridge University Press:  25 February 2011

J.B. Oude Elferink ,
F.H.P.M. Habraken  and
W.F. van der Weg
J.B. Oude Elferink
Affiliation:
Department of Atomic and Interface Physics, University of UtrechtP.O. Box 80.000, 3508 TA Utrecht, The Netherlands
F.H.P.M. Habraken
Affiliation:
Department of Atomic and Interface Physics, University of UtrechtP.O. Box 80.000, 3508 TA Utrecht, The Netherlands
W.F. van der Weg
Affiliation:
Department of Atomic and Interface Physics, University of UtrechtP.O. Box 80.000, 3508 TA Utrecht, The Netherlands
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Abstract

In this paper we report on the composition of thermally nitrided silicon dioxide films on silicon. Nitridation temperatures ranging from 950 to 1150ºC and nitridation times ranging from 10 to 240 s were used. The purpose of this study is to reveal the mechanisms involved in the nitridation process with emphasis on the role of hydrogen. From the temperature dependence of the amount of nitrogen in the films the effective activation energy for nitrogen incorporation in this initial stage was deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 339
Copyright
Copyright © Materials Research Society 1989

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References

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