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Rapid Isothermal Annealing of Si Implanted Semi-Insulating GaAs by Means of High Frequency Induction Heating.

Published online by Cambridge University Press:  15 February 2011

A. Cetronio ,
M. Bujatti ,
P. D'eustacchio  and
S. Ciceroni
A. Cetronio
Affiliation:
Selenia S.P.A., Research Laboratories, Via Tiburtina, 131 Roma, Italy.
M. Bujatti
Affiliation:
Selenia S.P.A., Research Laboratories, Via Tiburtina, 131 Roma, Italy.
P. D'eustacchio
Affiliation:
Selenia S.P.A., Research Laboratories, Via Tiburtina, 131 Roma, Italy.
S. Ciceroni
Affiliation:
Selenia S.P.A., Research Laboratories, Via Tiburtina, 131 Roma, Italy.
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Abstract

Experimental results obtained by rapid isothermal annealing of Si implanted semi-insulating GaAs are presented and compared with results obtained by electron-beam and conventional furnace annealing. We shall show that for high Cr-doped material the problem of redistribution cannot be avoided and that for undoped material, this technique yields very good activation (near 100%) and high mobility (approximately 4400 cm2 /V.sec).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 641
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Present address: Santa Rosa Technology Ctr., Hewlett-Packard, Santa Rosa, CA

References

REFERENCES

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