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Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

Published online by Cambridge University Press:  22 February 2011

Zhifeng Sui ,
Irving P. Herman  and
Joze Bevk
Zhifeng Sui
Affiliation:
Department of Applied Physics and the Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
Irving P. Herman
Affiliation:
Department of Applied Physics and the Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
Joze Bevk
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 333
Copyright
Copyright © Materials Research Society 1991

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References

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