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Raman Studies of Hydrogen Passivation in Silicon

Published online by Cambridge University Press:  26 February 2011

M. Stutzmann  and
C. P. Herrero
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, D-7000 Stuttgart 80, Federal Republic of Germany
C. P. Herrero
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

We have studied the hydrogen passivation of boron acceptors in bulk crystalline silicon with Raman scattering. Upon hydro-genation, distinct changes in the optical phonon lineshape and the localized vibrational modes of boron are observed. The hy-drogen in the passivated region gives rise to a specific Raman-active mode, whose vibrational frequency depends strongly on temperature and uniaxial stress. Implications of these results on possible structural models are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

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References

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