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Raman Spectroscopy Measurements of Interface Effects in C60/Copper-Oxide/Copper

Published online by Cambridge University Press:  11 February 2011

Y. Li ,
J. H. Rhee ,
D. Singh  and
S. C Sharma
Y. Li
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA
J. H. Rhee
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA
D. Singh
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA
S. C Sharma*
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA
*
* sharma@uta.edu
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Abstract

We have investigated interface effects in C60/Cu-oxide/Cu structures. C60 thin films were grown under high vacuum by thermal evaporation and the well-known “pentagonal pinch mode” of C60, Ag(2) band was examined by Raman spectroscopy. We observe Raman-active bands centered at 1420, 1448, 1455, and 1465 cm−1 in C60/Cu-oxide/Cu samples with a thin (∼40 nm) C60 overlayer. The 1420, 1448, and 1455 cm−1 Raman bands are not observed in the spectra of pristine C60 powder, copper-oxide substrate, and C60/Cu-oxide/Cu samples with thick (∼1.3 μm) C60 overlayer. We associate these new Raman-active bands with C60/copper-oxide interface.

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References

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