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Raman and X-Ray Scattering From Dense Semiconductor-Dielectric Nanocomposites

Published online by Cambridge University Press:  25 February 2011

W.H. Yang ,
T.E. Huber ,
J.A. Lubin ,
G.E. Walrafen  and
C.A. Huber
W.H. Yang
Affiliation:
Laser Chemistry, Howard University, Washington, DC 20059 Chinese Academy of Sciences, Beijing, People's Republic of, China
T.E. Huber
Affiliation:
Laser Chemistry, Howard University, Washington, DC 20059 Department of Physics, Polytechnic University, Brooklyn, NY 11201
J.A. Lubin
Affiliation:
Laser Chemistry, Howard University, Washington, DC 20059
G.E. Walrafen
Affiliation:
Laser Chemistry, Howard University, Washington, DC 20059
C.A. Huber
Affiliation:
Naval Surface Warfare Center, Code R36, Silver Spring, MD 20903
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Abstract

Raman scattering measurements have been performed on semiconductor-insulator nanocomposites in which the semiconducting phase occupies a significant (30%) volume fraction. The composites have been synthesized by high pressure injection of the conducting melt into the nanochannels of commercially available insulating matrices. The optical phonon spectra of GaSb- and Te-SiO2 composites exhibit shifts, broadenings, and asymmetries when compared to those of the semiconducting bulk. These are interpreted in terms of strains and phonon confinement in the microcrystalline semiconducting phase. Xray diffraction measurements allow us to correlate the effects of crystallite size and strains on the optical modes of the composites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 286: Symposium J – Nanophase and Nanocomposite Materials , 1992 , 419
Copyright
Copyright © Materials Research Society 1993

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References

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