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Raman and Spectroscopic Ellipsometry Studies of P-Doped Poly-Si

Published online by Cambridge University Press:  10 February 2011

Stefan Zollner ,
Ran Liu ,
Jim Christiansen ,
Wei Chen ,
Kathy Monarch ,
Tan-Chen Lee ,
Rana Singh ,
Jane Yater ,
Wayne M. Paulson  and
Chris Feng
Stefan Zollner
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Ran Liu
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Jim Christiansen
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Wei Chen
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Kathy Monarch
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Tan-Chen Lee
Affiliation:
Motorola Semiconductor Technology, Arizona Technology Laboratories, Technology Test and Analysis Laboratory, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Rana Singh
Affiliation:
Motorola Semiconductor Product Sector, MD K21, Austin, TX 78721
Jane Yater
Affiliation:
Motorola Semiconductor Product Sector, MD K21, Austin, TX 78721
Wayne M. Paulson
Affiliation:
Motorola Semiconductor Product Sector, MD K21, Austin, TX 78721
Chris Feng
Affiliation:
Motorola Semiconductor Product Sector, MD K21, Austin, TX 78721
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Abstract

Phosphorus-doped poly-Si films were studied with Raman spectroscopy and spectroscopic ellipsometry. We determine strain and grain size and compare with a structural analysis using plan-view transmission electron microscopy and atomic force microscopy. We analyze the derivatives of our ellipsometry data (peak shifts and broadenings) using analytical lineshapes, which are affected by grain size, film thickness, doping, and inhomogeneity, but only minimally by macroscopic biaxial strain.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 957
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Wristers, D., Wang, H.H., Wolf, I. de, Han, L.K., Kwong, D.L., Fulford, J., in 1996 IEEE International Reliability Physics Proceedings, (IEEE, New York, 1996) pp. 77–83.Google Scholar
2 Fitch, J.T., Bjorkman, C.H., Lucovsky, G., Pollak, F.H., Yin, X.J., Vac. Sci. Technol. B 7, 775 (1989).Google Scholar
3 Nguyen, N.V., Chandler-Horowitz, D., Amirtharaj, P.M., Pellegrino, J.G., Appl. Phys. Lett. 64, 2688 (1994).Google Scholar
4 Devine, R.A.B., Appl. Phys. Lett. 68, p. 3108 (1996).Google Scholar
5 Herzinger, C.M., Johs, B., Woollam, W.A. McGahan, Paulson, W., J. Appl. Phys. 83, 3323 (1998).Google Scholar
6 Hegde, R.I., Paulson, W.M., Tobin, P.J., J. Vac. Sci. Technol. B 13, 1434 (1995).Google Scholar
7 Herzinger, C.M., Johs, B., Woollam, J.A., (unpublished).Google Scholar
8 Yu, P.Y., and Cardona, M., Fundamentals of Semiconductors, Berlin, Springer, 1996.Google Scholar
9 Lange, R., Junge, K.E., Zollner, S., Iyer, S.S., Powell, A.P., Eberl, K., J. Appl. Phys. 80, 4578 (1996).Google Scholar
10 Anastassakis, E., Acta Physica Hungarica 74, 83 (1994).Google Scholar
11 Anastassakis, E., Cantarero, A., Cardona, M., Phys. Rev. B 41, 7529 (1990).Google Scholar
12 Englert, T., Abstreiter, G., Pontcharra, J., Solid-State Electron. 23, 31 (1980).Google Scholar
13 Lockwood, D.J. and Baribeau, J.-M., Phys. Rev. B 45, 8565 (1992).Google Scholar
14 Boultadakis, S., Logothetidis, S., Ves, S., J. Appl. Phys. 72, 3648 (1992).Google Scholar
15 Boultadakis, S., Logothetidis, S., Ves, S., Kircher, J., J. Appl. Phys. 73, 914 (1993).Google Scholar
16 Ingels, M., Stutzmann, M., and Zollner, S., Mat. Res. Soc. Symp. Proc. 164, 229 (1990).Google Scholar
17 Logothetidis, S., Polatoglou, H.M., Ves, S., Solid State Commun. 68, 1075 (1988).Google Scholar
18 Nguyen, H.V. and Collins, R.W., Phys. Rev. B 47, 1911 (1993).Google Scholar
19 Jellison, G.E., Withrow, S.P., McCamy, J.W., Budai, J.D., Lubben, D., Godbole, M.J., Phys. Rev. B 52, 14607 (1995).Google Scholar
20 Viña, L. and Cardona, M., Phys. Rev. B 29, 6739 (1984).Google Scholar
21 Chandrasekhar, M., Renucci, J.B., Cardona, M., Phys. Rev. B 17, 1623 (1978).Google Scholar