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Radiation Effects on the Optical and Transport Properties of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

J. Scott Payson ,
Yang Li  and
James R. Woodyard
J. Scott Payson
Affiliation:
Electrical and Computer Engineering Department, and the Institute for Manufacturing Research, Wayne State University, Detroit, MI 48202.
Yang Li
Affiliation:
Electrical and Computer Engineering Department, and the Institute for Manufacturing Research, Wayne State University, Detroit, MI 48202.
James R. Woodyard
Affiliation:
Electrical and Computer Engineering Department, and the Institute for Manufacturing Research, Wayne State University, Detroit, MI 48202.
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Abstract

The focus of our work is to investigate the role of defects introduced by particle irradiation on the electrical and optical properties of amorphous silicon based alloys. We have studied photovoltaic cells and intrinsic films and have found that irradiation produces electrical and optically active defects which anneal at temperatures less than 200 degrees Celsius. The defects produce sub-band-gap states with a peak 1.4 eV below the conduction band edge; the structure of the material does not appear to be altered as evidenced by the band-tail states. Significant room temperature annealing effects have been observed following 1.00 MeV proton irradiation of intrinsic films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 321
Copyright
Copyright © Materials Research Society 1989

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References

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