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Radiation Damage Of InGaAs Photodiodes By High Energy Particles

Published online by Cambridge University Press:  10 February 2011

T. Kudou ,
H. Ohyama ,
E. Simoen ,
C. Claeys ,
Y. Takami ,
K. Shigaki ,
A. Fujii  and
H. Sunaga
T. Kudou
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11 Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11 Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-01 Japan
K. Shigaki
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11 Japan
A. Fujii
Affiliation:
Kumamoto University, 39-1 Kurokami Kumamoto, 860 Japan
H. Sunaga
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-12 Japan
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Abstract

Results are presented of a study on the performance degradation and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 471
Copyright
Copyright © Materials Research Society 1998

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