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Radial distribution functions of amorphous silicon carbide

Published online by Cambridge University Press:  11 February 2011

Manabu Ishimaru ,
In-Tae Bae  and
Yoshihiko Hirotsu
Manabu Ishimaru
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
In-Tae Bae
Affiliation:
Department of Materials Science and Engineering, Osaka University, Yamadaoka, Suita, Osaka 565–0871, Japan
Yoshihiko Hirotsu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
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Abstract

Atomistic structures of amorphous silicon carbide generated by energetic particles were examined by electron diffraction techniques in combination with imaging plates. Atomic pair distribution functions revealed that not only heteronuclear (silicon-carbon) bonds but also homonuclear (silicon-silicon and carbon-carbon) bonds exist in the first coordination shell of amorphous silicon carbide induced by ion- or electron-beam-irradiation. Structural changes from amorphous silicon carbide to amorphous silicon were observed under the electron irradiation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.2
Copyright
Copyright © Materials Research Society 2003

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References

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