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Pulsed Laser Excited Microwave Photo Conductivity Applications to High Resolution Defect Diagnostics OP Ion and Laser Beam Modified Semiconductor Surface

Published online by Cambridge University Press:  25 February 2011

D. L. Khavroshin ,
A. A. Manenkov ,
S. Yu. Popov  and
S. Yu. Sokolov
D. L. Khavroshin
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
A. A. Manenkov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
S. Yu. Popov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
S. Yu. Sokolov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
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Abstract

A novel diagnostic technique for the studies of semiconductor surfaces is described. Experimental data on nonlocal modification effects in laser produced scribing, doping and annealing of ion implanted GaAs and Si are presented. Mechanisms of nonlocal structural and electric properties changes under modification are analyzed. Nonlocality phenomena are concluded to be universal for any strong modification procedure and very important for microelectronics technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 699
Copyright
Copyright © Materials Research Society 1993

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References

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