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Pulsed Laser Deposition of SrBi2Ta2O9 Thin Films for Nonvolatile Memory Applications

Published online by Cambridge University Press:  15 February 2011

S. Werner ,
D. Thomas ,
S.K. Streiffer ,
O. Auciello  and
Angus I. Kingon
S. Werner
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
D. Thomas
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
S.K. Streiffer
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
O. Auciello
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695 MCNC, Electronic Technologies Division, 3021 Cornwallis Rd., Research Triangle Park, N.C. 27709-2889
Angus I. Kingon
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
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Abstract

Ferroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 235
Copyright
Copyright © Materials Research Society 1996

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References

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