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Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

Published online by Cambridge University Press:  15 February 2011

H-J. Cho ,
William Jo  and
T. W. Noh
H-J. Cho
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
William Jo
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
T. W. Noh
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
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Abstract

Bi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 475
Copyright
Copyright © Materials Research Society 1994

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References

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