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Pulsed Laser Atom Probe Analysis of III-V Compound Semiconductor Epilayers.

Published online by Cambridge University Press:  28 February 2011

Ross A. D. Mackenzie ,
J. Alex Liddle ,
Chris R. M. Grovenor  and
Alfred Cerezo
Ross A. D. Mackenzie
Affiliation:
University of Oxford, Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH, United Kingdom
J. Alex Liddle
Affiliation:
University of Oxford, Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH, United Kingdom
Chris R. M. Grovenor
Affiliation:
University of Oxford, Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH, United Kingdom
Alfred Cerezo
Affiliation:
University of Oxford, Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH, United Kingdom
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Abstract

The pulsed laser atom probe has been used to characterise the fine scale chemistry of a range of III-V ternary and quaternary compound semiconductors (GaInAs, AlInAs, GaAlInAs) grown, using MOCVD techniques, on indium phosphide substrates. It has been observed that there are fine scale chemical fluctuations in some specimens on a scale of typically 10–20 nm. The fluctuations appear to be a result of localized clustering of the group III components in the epilayer. In quaternary material there is evidence for different degrees of clustering for different components. It is suggested that this compositional fluctuation is a consequence of clustering occuring above a miscibility gap. The existence of a TEM contrast mechanism inherent to the material has the effect of making TEM an unreliable indicator of fine scale compositional variations in these systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 439
Copyright
Copyright © Materials Research Society 1990

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