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Pulsed Esr Studies on Microcrystalline Silicon

Published online by Cambridge University Press:  10 February 2011

C. Malten ,
F. Finger ,
J. Müller  and
S. Yamasaki
C. Malten
Affiliation:
Joint Research Center for Atom Technology, Tsukuba, Japan
F. Finger
Affiliation:
Forschungszentrum Jülich, ISI-PV, D-52425 Jülich, Germany
J. Müller
Affiliation:
Forschungszentrum Jülich, ISI-PV, D-52425 Jülich, Germany
S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology, Tsukuba, Japan
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Abstract

Two-pulse-echo field-sweep spectra of boron-doped samples show in addition to dangling bonds (DB) a very broad feature of approximately 500 G width. This feature is the sum of several lines whose relative intensities change with doping and temperature. The total intensity increases with doping. The spin-lattice relaxation time T I of the resonance at g=1.998 referred to as conduction electrons (CE) has been studied for undoped and P-doped microcrystalline silicon. The discrepancy between T 1 values previously reported has been resolved and the values for CE are at least two orders of magnitude smaller than those of the DB. In undoped samples cross-relaxation between the CE and DB spin systems might explain the similar T 1 values obtained for CE and DB in inversion recovery measurements.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 757
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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