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Pseudomorphic HEMT Devices for Microwave and Millimeter Wave Applications

Published online by Cambridge University Press:  22 February 2011

C.S. Wu ,
G.L. Lan ,
C.K. Pao ,
S.X. Bar  and
M. Hu
C.S. Wu
Affiliation:
Gallium Arsenide Operations Hughes Aircraft Company 3100 West Lomita Boulevard, Torrance, CA 90509
G.L. Lan
Affiliation:
Gallium Arsenide Operations Hughes Aircraft Company 3100 West Lomita Boulevard, Torrance, CA 90509
C.K. Pao
Affiliation:
Gallium Arsenide Operations Hughes Aircraft Company 3100 West Lomita Boulevard, Torrance, CA 90509
S.X. Bar
Affiliation:
Gallium Arsenide Operations Hughes Aircraft Company 3100 West Lomita Boulevard, Torrance, CA 90509
M. Hu
Affiliation:
Gallium Arsenide Operations Hughes Aircraft Company 3100 West Lomita Boulevard, Torrance, CA 90509
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Abstract

Pseudomorphic HEMT (PHEMT) devices have demonstrated superior performance at microwave and millimeter wave frequency ranges. They exhibit multi-functional characteristics such as high power, high efficiency and low noise over a broad frequency range (C-band through W-band). Because of their important, broad range of applications, the microwave industry has recently begun developing the PHEMT manufacturing technology in order to cope with the increasing demand for PHEMT insertion into microwave products. In this paper we will discuss the advantages of using PHEMT devices for microwave and millimeter wave applications and provide an overview of the published state-ofthe-art performance of PHEMT devices and monolithic microwave integrated circuits (MMICs) at microwave and millimeter wave frequencies. We will also present recent progress in Hughes PHEMT technology development including device epitaxial design and process enhancements. Finally, we will present recent data on PHEMT reliability.

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References

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