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Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

Published online by Cambridge University Press:  21 February 2011

R. Turan ,
Q. Wahab ,
L. Hultman ,
M. Willander  and
J. -E. Sundgren
R. Turan
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
Q. Wahab
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
L. Hultman
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
M. Willander
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
J. -E. Sundgren
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
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Abstract

We report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 157
Copyright
Copyright © Materials Research Society 1994

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References

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