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Properties of A—Sin:H Films Prepared by Glow Discharge of Si2H6—Nh3 Gas Mixture

Published online by Cambridge University Press:  28 February 2011

Y. Kojima ,
S. Narikawa ,
T. Matsuyama ,
E. Imada ,
H. Nojima ,
T. Hayakawa  and
S. Ehara
Y. Kojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
S. Narikawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
T. Matsuyama
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
E. Imada
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
H. Nojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
T. Hayakawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
S. Ehara
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
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Abstract

The electrical and optical properties of a—SiNx:H films prepared by the glow discharge of Si2H6-NH3 gas mixture have been investigated in a wide range of the molar ratio of NH3 to Si2H6 The maxima of the dark—and the photo—conductivity are observed at the molar ratio of about 10-1. At this molar ratio the deposition rate is about33 Å/sec. The optical gap and the compositional ratio of nitrogen to silicon change smoothly from those of a—Si:H to those of a—Si3N4. It is found that the valency control is possible in a—SiNx:H films prepared at a high deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 203
Copyright
Copyright © Materials Research Society 1985

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