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Properties of a Novel Amorphous Transparent Conductive Oxide, InGaO3(ZnO)m

Published online by Cambridge University Press:  10 February 2011

M. Orita ,
H. Ohta ,
M. Hirano ,
H. Hosono ,
K. Morita ,
H. Tanji  and
H. Kawazoe
M. Orita
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Kawasaki, 213-0012, JAPAN, orita@team.ksp.or.jp
H. Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Kawasaki, 213-0012, JAPAN
M. Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Kawasaki, 213-0012, JAPAN
H. Hosono
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Kawasaki, 213-0012, JAPAN
K. Morita
Affiliation:
R&D center, HOYA corporation, 3-3-1 Musashino, Akishima, 196-8510, JAPAN
H. Tanji
Affiliation:
R&D center, HOYA corporation, 3-3-1 Musashino, Akishima, 196-8510, JAPAN
H. Kawazoe
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Kawasaki, 213-0012, JAPAN
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Abstract

Novel amorphous transparent conductive oxides, InGaO3(ZnO)m, where m is an integer less than four, was developed. Optical transmittance in the visible region exceeded over 80 % and the electric conductivity at 300 K was as large as 400 S/cm. Both Seebeck and Hall coefficients exhibited negative values, indicating the conduction was n-type. It was suggested that 4s orbital of Zn2+ played a significant role for the formation of the extended state responsible for the conduction, while In3+ acted as a modifier for the stabilization of amorphous state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 291
Copyright
Copyright © Materials Research Society 2000

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