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Properties and Effects of Hydrogen in GaN

Published online by Cambridge University Press:  03 September 2012

S.J. Pearton ,
H. Cho ,
F. Ren ,
J.-I. Chyi ,
J. Han  and
R.G. Wilson
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
J.-I. Chyi
Affiliation:
Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185, USA
R.G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381, USA
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Abstract

The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mgdoped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W10.6
Copyright
Copyright © Materials Research Society 1999

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